| Wet etching | - |
|---|---|
| Si etching | KOH |
| Wet oxide etching | BOE, HF, HCl |
| Wet metal etching | Au, Cr |
| Immersion cleaning | SC1, HCl |
| Dry etching | - |
|---|---|
| DRIE | Si |
| RIE | Poly-Si, SiO2, SiN, Polyimide, Parylene, and more |
| Plasma cleaning | Plasma cleaning and plasma ashing are both possible. |
| Metallization | - |
|---|---|
| Evaporation | Au, Cu, Ti, Cr, Pt, Ni, Al |
| Sputtering | Cr, Au, Ti, TiW, Cu |
| Materials | - |
|---|---|
| LPCVD | Low stress nitride, low stress polysilicon, low temperature oxide, phosphosilicate glass (PSG) |
| Polymers | Polyimide, parylene-C |
| Lithography | - |
|---|---|
| Contact lithography | Negative/positive resists, SU-8 and polyimide processing |
| Projection lithography | Negative/positive resists, SU-8 and polyimide processing |
| Backside alignment | Negative/positive resists, SU-8 and polyimide processing |
| Post processing | - |
|---|---|
| Dicing | Wafer saw is designed for silicon, glass, fused silica, quartz, sapphire, and more. |
| HF liquid release | Liquid HF is used to release devices from SOI wafers. |
| Critical CO₂ drying | Removes liquids and surface tension forces via CO₂. |
| Wafer bonding | - |
|---|---|
| Types | Fusion, glass-glass, silicon-glass, eutectic, anodic |
| Metrology | - |
|---|---|
| Techniques | SEM, profilometry, infrared inspection, interferometry |
| Film analysis | Film stress, thickness, or resistivity |
| Thermal processing | - |
|---|---|
| Si oxidation | Silicon oxide is grown on a wafer by diffusing it onto a wafer at high temperature. |
| Annealing | Wafers are brought to high temperatures and slowly cooled. |
| Additional options | - |
|---|---|
| Wafer thinning | Wafer thickness is reduced by backgrinding. |
| Maskless alignment | Photo exposure is done without physical masks and a laser is used for direct pattern writing. |
| Wafer polishing | Wafers are polished with slurry and pads. |
| Ion implantation | Doping is achieved by accelerating ions into the wafer. |
| PECVD | Chemical vapor deposition technique using plasma to lower the activation energies. |
| Parylene deposition | Parylene is deposited as a transparent film across all wafer surfaces. |
| Laser dicing | The wafer is diced with a laser instead of a wafer saw. |
| FIB | Structures on the wafer are cut with a focused ion beam. |